4
Application Information
The HIP1020 was designed specifically to address the
requirements of Device Bay peripherals. The small package,
low cost and integrated features make it the ideal component
for high-side power control of all three Device-Bay rail
voltages without using any additional components except for
the switching MOSFETs themselves. The integrated charge
pump supplies sufficient voltage to fully enhance the lower-
cost N-Channel power MOSFETs, and the internally-
controlled turn-on ramp provides soft switching for all types
of loads.
Although the HIP1020 was developed with Device Bay in
mind, it has the versatility to perform in any situation where
low-cost load switching is required.
MOSFET Selection for Device Bay Peripherals
When selecting power MOSFETs for Device Bay (or any
similar application), two major concerns are the voltage drop
across the MOSFET and the thermal requirements imposed
by the particular application. Voltage drop across the
MOSFET is controlled by its on-state resistance, r
DS(ON)
,
and the peak current through the device, while the thermal
requirements are determined by several factors including
ambient temperature, amount of air flow if any, area of the
copper mounting pad, the thermal characteristics of the
MOSFET and its package, and the average current through
the MOSFET.
Typical Performance Curves
FIGURE 2. HGATE (PIN 4) TURNING ON WITH VCC = 12V
FIGURE 3. LGATE (PIN 3) TURNING ON WITH VCC = 12V
FIGURE 4. HGATE (PIN 4) TURNING ON WITH VCC = 5V
FIGURE 5. LGATE (PIN 3)TURNING ON WITH VCC = 5V
NOTES: Device is enabled at 10 milliseconds.
2. Pins 3 and 4 are unconnected.
3. Pins 3 and 4 are connected to the gates of typical high-performance N-Channel MOSFETs.
0
-5
5
10
15
20
25
0
10
30
40
50
20
MILLISECONDS
22nF
NOTE 3
NOTE 2
C1 = 22nF
C1 = 10nF
0
-5
5
10
15
20
25
0
10
30
40
50
20
MILLISECONDS
NOTE 3
NOTE 2
C1 = 22nF
C1 = 10nF
-5
0
5
10
15
0
10
30
40
50
20
MILLISECONDS
NOTE 3
NOTE 2
C1 = 22nF
C1 = 10nF
0
10
20
30
40
50
-5
0
5
10
15
MILLISECONDS
NOTE 3
NOTE 2
C1 = 22nF
C1 = 10nF
HIP1020
相关PDF资料
HIP6018BCBZ-T IC REG TRPL BCK/LINEAR 24-SOIC
HIP6021CB-T IC REG QD BCK/LINEAR 28-SOIC
HIP6521CB-T IC REG QD BCK/LINEAR SYNC 16SOIC
HMC920LP5E IC CTRLR ACTIVE BIAS 32QFN
IDTTSE2002B3CNRG IC TEMP SENS EEPROM DFN-8
IPM6220ACAZ-T IC REG 5OUT BUCK/LDO SYNC 24SSOP
IR2170 IC CURRENT SENSE 600V 1MA 8-DIP
IR2171STR IC CURRENT SENSE 8SOIC
相关代理商/技术参数
HIP1020CKZ-T 功能描述:热插拔功率分布 DEVICE BAY PWR CNTRLR RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube
HIP1030 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:1A High Side Driver with Overload Protection
HIP1030_00 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:1A High Side Driver with Overload Protection
HIP1030AS 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:1A High Side Driver with Overload Protection
HIP1031 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Half Amp High Side Driver with Overload Protection
HIP1031AS 制造商:Rochester Electronics LLC 功能描述:- Bulk
HIP1090 制造商:INTERSIL 制造商全称:Intersil Corporation 功能描述:Protected High Side Power Switch with Transient Suppression
HIP1090AS 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: